Effect of Grid Potential and Sepearated Ion Collector of Multi Grid Type Ion Temperature Probe (RPA)
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چکیده
منابع مشابه
fabrication of new ion sensitive field effect transistors (isfet) based on modification of junction-fet for analysis of hydronium, potassium and hydrazinium ions
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ژورنال
عنوان ژورنال: IEEJ Transactions on Fundamentals and Materials
سال: 1981
ISSN: 0385-4205,1347-5533
DOI: 10.1541/ieejfms1972.101.641